Studies of noise properties of thick-film conducting lines from Au or PdAg conductive pastes on LTCC or alumina substrates are reported. Experiments have been carried out at the room temperature on samples prepared in the form of meanders by traditional screen-printing or laser-shaping technique. Due to a low resistance of the devices under test (DUTs), low-frequency noise spectra have been measured for the dc-biased samples arranged in a bridge configuration, transformer-coupled to a low-noise amplifier. The detailed analysis of noise sources in the signal path and its transfer function, including the transformer, has been carried out, and a procedure for measurement setup self-calibration has been described. The 1/f noise component originating from resistance fluctuations has been found to be dominant in all DUTs. The analysis of experimental data leads to the conclusion that noise is produced in the bends of meanders rather than in their straight segments. It occurs that noise of Au-based laser-shaped lines is significantly smaller than screen-printed ones. PdAg lines have been found more resistive but simultaneously less noisy than Au-based lines.
The paper presents general information on LTCC materials, manufacturing processes and properties of fired modules. A Multichip Module package has been the main application of Low Temperature Cofired Ceramic (LTCC) technology. Recently, this technology is also used for production of sensors, actuators and microsystems. The research and development on the LTCC sensors and microsystems carried out in the Laboratory of Thick Film Microsystems at Wroclaw University of Technology are presented. LTCC microfluidic system is described in detail. Moreover, a short information is given on other LTCC applications .
Graphene is a very promising material for potential applications in many fields. Since manufacturing technologies of graphene are still at the developing stage, low-frequency noise measurements as a tool for evaluating their quality is proposed. In this work, noise properties of polymer thick-film resistors with graphene nano-platelets as a functional phase are reported. The measurements were carried out in room temperature. 1/f noise caused by resistance fluctuations has been found to be the main component in the specimens. The parameter values describing noise intensity of the polymer thick-film specimens have been calculated and compared with the values obtained for other thick-film resistors and layers used in microelectronics. The studied polymer thick-film specimens exhibit rather poor noise properties, especially for the layers with a low content of the functional phase.
Recently a new technology of piezoelectric transducers based on PZT thick film has been developed as a response to a call for devices working at higher frequencies suitable for production in large numbers at low cost. Eight PZT thick film based focused transducers with resonant frequency close to 40 MHz were fabricated and experimentally investigated. The PZT thick films were deposited on acoustically engineered ceramic substrates by pad printing. Considering high frequency and non-linear propagation it has been decided to evaluate the axial pressure field emitted (and reflected by thick metal plate) by each of concave transducer differing in radius of curvature - 11 mm, 12 mm, 15 mm, 16 mm. All transducers were activated using AVTEC AVG-3A-PS transmitter and Ritec diplexer connected directly to Agilent 54641D oscilloscope. As anticipated, in all cases the focal distance was up to 10% closer to the transducer face than the one related to the curvature radius. Axial pressure distributions were also compared to the calculated ones (with the experimentally determined boundary conditions) using the angular spectrum method including nonlinear propagation in water. The computed results are in a very good agreement with the experimental ones. The transducers were excited with Golay coded sequences at 35-40 MHz. Introducing the coded excitation allowed replacing the short-burst transmission at 20 MHz with the same peak amplitude pressure, but with almost double center frequency, resulting in considerably better axial resolution. The thick films exhibited at least 30% bandwidth broadening comparing to the standard PZ 27 transducer, resulting in an increase in matching filtering output by a factor of 1.4-1.5 and finally resulting in a SNR gain of the same order.
Measurement of low-frequency noise properties of modern electronic components is a very demanding challenge due to the low magnitude of a noise signal and the limit of a dissipated power. In such a case, an ac technique with a lock-in amplifier or the use of a low-noise transformer as the first stage in the signal path are common approaches. A software dual-phase virtual lock-in (VLI) technique has been developed and tested in low-frequency noise studies of electronic components. VLI means that phase-sensitive detection is processed by a software layer rather than by an expensive hardware lock-in amplifier. The VLI method has been tested in exploration of noise in polymer thick-film resistors. Analysis of the obtained noise spectra of voltage fluctuations confirmed that the 1/f noise caused by resistance fluctuations is the dominant one. The calculated value of the parameter describing the noise intensity of a resistive material, C = 1·10−21 m3, is consistent with that obtained with the use of a dc method. On the other hand, it has been observed that the spectra of (excitation independent) resistance noise contain a 1/f component whose intensity depends on the excitation frequency. The phenomenon has been explained by means of noise suppression by impedances of the measurement circuit, giving an excellent agreement with the experimental data.
Studies of electrical properties, including noise properties, of thick-film resistors prepared from various resistive and conductive materials on LTCC substrates have been described. Experiments have been carried out in the temperature range from 300 K up to 650 K using two methods, i.e. measuring (i) spectra of voltage fluctuations observed on the studied samples and (ii) the current noise index by a standard meter, both at constant temperature and during a temperature sweep with a slow rate. The 1/f noise component caused by resistance fluctuations occurred to be dominant in the entire range of temperature. The dependence of the noise intensity on temperature revealed that a temperature change from 300 K to 650 K causes a rise in magnitude of the noise intensity approximately one order of magnitude. Using the experimental data, the parameters describing noise properties of the used materials have been calculated and compared to the properties of other previously studied thick-film materials.
Semiconductive - resistive sensors of toxic and explosive gases were fabricated from nanograins of SnO2 using thick-.lm technology. Sensitivity, selectivityand stabilityof sensors working in di.erent temperature depend on the way the tin dioxide and additives were prepared. A construction also plays an important role. The paper presents an attitude towards the evaluation of transport of electrical charges in semiconductive grain layer of SnO2, when dangerous gases appear in the surrounding atmosphere.
LTCC-based pressure sensors are promising candidates for wet-wet applications in which the effect of the surrounding media on the sensor's characteristics is of key importance. The effect of humidity on the sensor's stability can be a problem, particularly in the case of capacitive sensors. A differential mode of operation can be a good solution, but manufacturing the appropriate sensing capacitors remains a major challenge. In the case of piezoresistive sensors the influence of humidity is less critical, but it still should be considered as an important parameter when designing sensors for low-pressure ranges. In this paper we discuss the stability of the sensors' offset characteristics, which was inspected closely using experimental and numerical analyses.
This work presents a theoretical study for the distribution of nanocomposite structure of plasmonic thin-film solar cells through the absorber layers. It can be reduced the material consumption and the cost of solar cell. Adding nanometallic fillers in the absorber layer has been improved optical, electrical characteristics and efficiency of traditional thin film solar cells (ITO /CdS/PbS/Al and SnO2/CdS/CdTe/Cu) models that using sub micro absorber layer. Also, this paper explains analysis of J-V, P-V and external quantum efficiency characteristics for nanocomposites thin film solar cell performance. Also, this paper presents the effect of increasing the concentration of nanofillers on the absorption, energy band gap and electron-hole generation rate of absorber layers and the effect of volume fraction on the energy conversion efficiency, fill factor, space charge region of the nanocomposites solar cells.
Many performing artists in the interwar period in Poland assumed stage names, which were considered a tool of promoting one’s image, but also served other functions, such as the concealment of identity. Over two hundred such pseudonyms — together with the respective artists’ birth names — have been collected and analysed in the article. Approximately in the case of half of them was the original given name retained, and only the surname underwent a change. The comparison of the assumed names with the real ones shows that many names were shortened, and/or made to sound foreign or exotic. Minority surnames — Jewish/German, Russian, Ukrainian — were frequently made to sound Polish, while the Polish ones were foreignised (to make them look English, Italian, French) or vaguely exoticised.
This paper presents the concept and modern technological approach to the fabrication of discrete, integrated and integral micropassives. The role of these components in modern electronic circuits is discussed too. The material, technological and constructional solutions and their relation with electrical and stability properties are analyzed in details for linear and nonlinear microresistors made and characterized at the Faculty of Microsystem Technology, Wrocław University of Technology.