A thermal resistance characterization of semiconductor quantum-well heterolasers in the AlGaInAs-AlGaAs system (λst ≈ 0.8 μm), GaSb-based laser diodes (λst ≈ 2 μm), and power GaN light-emitting diodes (visible spectral region) was performed. The characterization consists in investigations of transient electrical processes in the diode sources under heating by direct current. The time dependence of the heating temperature of the active region of a source ΔT(t), calculated from direct bias change, is analyzed using a thermal RTCT equivalent circuit (the Foster and Cauer models), where RT is the thermal resistance and CT is the heat capacity of the source elements and external heat sink. By the developed method, thermal resistances of internal elements of the heterolasers and light-emitting diodes are determined. The dominant contribution of a die attach layer to the internal thermal resistance of both heterolaser sources and light-emitting diodes is observed. Based on the performed thermal characterization, the dependence of the optical power efficiency on current for the laser diodes is determined.
The paper summarises results of measurements of remelting area geometry, thermal efficiency and melting efficiency characterising the surface remelting process applied to castings of MAR-M-509 cobalt alloy. The remelting process was carried out with the use of GTAW (Gas Tungsten Arc Welding) method in protective atmosphere of helium, at the electric current intensity in the range from 100 A to 300 A, and the electric arc scanning velocity vs in the range from 200 mm/min to 800 mm/min. The effect of current intensity and electric arc scanning velocity on geometrical parameters of remeltings, thermal efficiency, and melting efficiency characterising the remelting process has been determined.