The effect of cobalt aluminate inoculant addition and melt-pouring temperature on the structure and mechanical properties of Ni-based superalloy was studied. The first major move to control the quality of investment cast blades and vanes was the control of grain size. Cobalt aluminate (CoAl2O4) is the most frequently utilized inoculant in the lost-wax casting process of Ni-based superalloys. The inoculant in the prime coat of moulds and pouring temperature play a significant role in grain size control. The finest surface grains were obtained when the internal surface of shell mould was coated with cobalt aluminate and subsequently pouring was at 1480°C. The influence of selected casting parameters and inoculant addition on mechanical properties was investigated on the basis of tensile, creep and hardness testing. The effect of grain refinement on mechanical properties were consistent with established theories. Tests conducted at ambient temperature indicated a beneficial effect of grain refinement both on tensile strength and hardness. In contrast at elevated temperature during creep, the reverse trend was observed.
In the paper recent progress at VIGO/MUT (Military University of Technology) MOCVD Laboratory in the growth of Hg1-xCdxTe (HgCdTe) multilayer heterostructures on GaAs/CdTe substrates is presented. The optimum conditions for the growth of single layers and complex multilayer heterostructures have been established. One of the crucial stages of HgCdTe epitaxy is CdTe nucleation on GaAs substrate. Successful composite substrates have been obtained with suitable substrate preparation, liner and susceptor treatment, proper control of background fluxes and appropriate nucleation conditions. The other critical stage is the interdi#27;used multilayer process (IMP). The growth of device-quality HgCdTe heterostructures requires complete homogenization of CdTe-HgTe pairs preserving at the same time suitable sharpness of composition and doping profiles. This requires for IMP pairs to be very thin and grown in a short time. Arsenic and iodine have been used for acceptor and donor doping. Suitable growth conditions and post growth anneal is essential for stable and reproducible doping. In situ anneal seems to be sufficient for iodine doping at any required level. In contrast, efficient As doping with near 100% activation requires ex situ anneal at near saturated mercury vapours. As a result we are able to grow multilayer fully doped (100) and (111) heterostructures for various infrared devices including photoconductors, photoelectromagnetic and photovoltaic detectors. The present generation of uncooled long wavelength infrared devices is based on multijunction photovoltaic devices. The technology steps in fabrication of devices are described. It is shown that near-BLIP performance is possible to achieve at ≈ 230 K with optical immersion. These devices are especially promising as 7.89.5 um detectors, indicating the potential for achieving detectivities above 109 cmHz1/2/W.