In this study a two-step short wet etching was implemented for the black silicon formation. The proposed structure consists of two steps. The first step: wet acidic etched pits-like morphology with a quite new solution of lowering the texturization temperature and second step: wires structure obtained by a metal assisted etching (MAE). The temperature of the process was chosen due to surface development control and surface defects limitation during texturing process. This allowed to maintain better minority carrier lifetime compared to etching in ambient temperature. On the top of the acidic texture the wires were formed with optimized height of 350 nm. The effective reflectance of presented black silicon structure in the wavelength range of 300-1100 nm was equal to 3.65%.
Silicon (Si) is the second most abundant element present in the lithosphere, and it constitutes one of the major inorganic nutrient elements of many plants. Although Si is a nonessential nutrient element, its beneficial role in stimulating the growth and development of many plant species has been generally recognized. Silicon is known to effectively reduce disease severity in many plant pathosystems. The key mechanisms of Si-mediated increased plant disease resistance involve improving mechanical properties of cell walls, activating multiple signaling pathways leading to the expression of defense responsive genes and producing antimicrobial compounds. This article highlights the importance and applicability of Si fertilizers in integrated disease management for crops.
The aim of this paper is to present a new approach to the problem of silicon integrated spiral inductors modeling. First, an overview of models and modeling techniques is presented. Based on 3D simulations and published measurement results, a list of physical phenomena to be taken into account in the model is created and based on it, the spiral inductor modeling by frequency sampling method is presented. To verify the proposed method a test circuit, containing 6 spiral inductors was designed and integrated in a silicon technology. The parameters of the spiral inductors from the test circuit were next measured and compared with simulations results. The comparison for one of those six spiral inductors is presented in the article.
Bollworms comprise the most harmful and economically relevant species of lepidopteran. Helicoverpa gelotopoeon (D.) (Lepidoptera: Noctuidae) is native to America and affects many crops. Tobacco is an industrial crop in which methods of pest control rely mainly on the application of insecticides. To develop new eco-friendly strategies against insect pests it is very important to overcome the side effects of insecticides. The utilization of fungal entomopathogens as endophytes is a new perspective that may accomplish good results. The present study aimed to evaluate the ability of endophytic Beauveria bassiana (Bals.-Criv.) Vuill. to affect H. gelotopoeon life parameters and feeding behavior on tobacco plants. Beauveria bassiana LPSC 1215 as an endophyte did not reduce the amount of vegetal material consumed by H. gelotopoeon larvae but affected the life cycle period of the plague, particularly the larval and adult stages. Also, egg fertility was affected since adults laid eggs that were not able to hatch. The results of this investigation provide new information on endophytic entomopathogen potential to be incorporated in Integrated Pest Management (IPM) programs.
This study manufactured a SiC coating layer using the vacuum kinetic spray process and investigated its microstructure and wear properties. SiC powder feedstock with a angular shape and average particle size of 37.4 μm was used to manufacture an SiC coating layer at room temperature in two different process conditions (with different degrees of vacuum). The thickness of the manufactured coating layers were approximately 82.4 μm and 129.4 μm, forming a very thick coating layers. The SiC coating layers consisted of α-SiC and β-SiC phases, which are identical to the feedstock. Cross-sectional observation confirmed that the SiC coating layer formed a dense structure. In order to investigate the wear properties, ball crater tests were performed. The wear test results confirmed that the SiC coating layer with the best wear resistance achieved approximately 4.16 times greater wear resistance compared to the Zr alloy. This study observed the wear surface of the vacuum kinetic sprayed SiC coating layer and identified its wear mechanism. In addition, the potential applications of the SiC coating layer manufactured using the new process were also discussed.
The paper presents the research results of horizontal continuous casting of ingots of aluminium alloy containing 2% wt. silicon (AlSi2). Together with the casting velocity (velocity of ingot movement) we considered the influence of electromagnetic stirring in the area of the continuous casting mould on refinement of the ingot’s primary structure and their selected mechanical properties, i.e. tensile strength, yield strength, hardness and elongation. The effect of primary structure refinement and mechanical properties obtained by electromagnetic stirring was compared with refinement obtained by using traditional inoculation, which consists in introducing additives, i.e. Ti, B and Sr, to the metal bath. On the basis of the obtained results we confirmed that inoculation done by electromagnetic stirring in the range of the continuous casting mould guarantees improved mechanical properties and also decreases the negative influence of casting velocity, thus increasing the structure of AlSi2 continuous ingots.
In paper is presented idea of construction and influence of selected parts of stand of horizontal continuous casting on quality of pure Al and AlSi2 alloy ingots. The main parts of the made stand belong to induction furnace, which is also tundish, water cooled continuous casting mould, system of recooling, system of continuous ingot drawing and cutting. Mainly was considered influence of electromagnetic stirrer, which was placed in continuous casting mould on refinement of ingots structure. Effect of structure refinement obtained by influence of electromagnetic stirring was compared with refinement obtained by use of traditional inoculation, which consists in introducing of additives i.e. Ti and B to metal bath. The results of studies show possibility of effective refinement of Al and AlSi2 alloy primary structure, only with use of horizontal electromagnetic field and without necessity of application of inoculants. This method of inoculation is important, because inoculants decrease the degree of purity and electrical conductivity of pure aluminum and moreover are reason of point cracks formation during rolling of ingots.
This article deal with non-conventional methods to affect the crystallization of Al-alloys by the application of electromagnetic field. The application of electromagnetic field is not technically complicated, it does not require mechanical contact with the melt, and the scale of the crystallization influence is not dependent on the thickness of the casting. Two experimental materials were used: AlSi10MgMn and AlSi8Cu2Mn and two values of electromagnetic induction: B = 0.1 T a B = 0.2 T. The best results for alloy AlSi10MgMn were achieved by application of electromagnetic field with induction B = 0.2 T; during this experiment the best mechanical properties were achieved - the biggest increase of mechanical properties was recorded. The best results for alloy AlSi8Cu2Mn were achieved by combination of electromagnetic field with induction B = 0.1 T and modification by 0.05 wt. % Sr. In this case we don´t recommend to use electromagnetic field with induction B = 0.2 T; because of deposition of coarse grains and decreasing of mechanical properties.
The paper presents the research results of the influence of the precipitation hardening on hardness and microstructure of selected Al-Si and Al-Cu alloys obtained as 30 mm ingots in a horizontal continuous casting process. The ingots were heat treated in process of precipitation hardening i.e. supersaturation with subsequent accelerated or natural ageing. Moreover in the range of the study it has been carried out investigations of chemical constitution, microscopic metallographic with use of scanning electron microscope with EDS analysis system, and hardness measurements using the Brinell method. On basis of obtained results it has been concluded that the chemical constitution of the investigated alloys enables to classify them into Al alloys for the plastic deformation as EN AW-AlSi2Mn (alternatively cast alloy EN AC-AlSi2MgTi) and as EN AW-AlCu4MgSi (alternatively cast alloy EN AC-AlCu4MgTi) grades. Moreover in result of applied precipitation hardening has resulted in the precipitation from a supersaturated solid solution of dispersive particles of secondary phases rich in alloying element i.e. Si and Cu respectively. In consequence it has been obtained increase in hardness in case of AlSi2Mn alloy by approximately 30% and in case of AlCu4MgSi alloy by approximately 20% in comparison to the as-cast state of continuous ingots.
This paper describes the study of thermal properties of packages of silicon carbide Schottky diodes. In the paper the packaging process of Schottky diodes, the measuring method of thermal parameters, as well as the results of measurements are presented. The measured waveforms of transient thermal impedance of the examined diodes are compared with the waveforms of this parameter measured for commercially available Schottky diodes.
The paper stresses the issue of strong temperature influence on the gain of a Silicon Photomultiplier (SiPM). High sensitivity of the detector to light (single photons) requires stable parameters during measurement, including gain. The paper presents a method of compensating the change of gain caused by temperature variations, by adjusting a suitable voltage bias provided by a precise power module. The methodology of the research takes in account applications with a large number of SiPMs (20 thousand), explains the challenges and presents the results of the gain stabilization algorithm.
439L stainless steel composites blended with fifteen micron SiC particles were prepared by uniaxial pressing of raw powders at 100 MPa and conventional sintering at 1350oC for 2 h. Based on the results of X-ray diffraction analysis, dissolution of SiC particles were apparent. The 5 vol% SiC specimen demonstrated maximal densification (91.5%) among prepared specimens (0-10 vol% SiC); the relative density was higher than the specimens in the literature (80-84%) prepared by a similar process but at a higher forming pressure (700 MPa). The stress-strain curve and yield strength were also maximal at the 5 vol% of SiC, indicating that densification is the most important parameter determining the mechanical property. The added SiC particles in this study did not serve as the reinforcement phase for the 439L steel matrix but as a liquid-phase-sintering agent for facilitating densification, which eventually improved the mechanical property of the sintered product.
The article presents results of pitting corrosion studies of selected silicon cast irons. The range of studies included low, medium and high silicon cast iron. The amount of alloying addition (Si) in examined cast irons was between 5 to 25 %. Experimental melts of silicon cast irons [1-3] were conducted in Department of Foundry of Silesian University of Technology in Gliwice and pitting corrosion resistance tests were performed in Faculty of Biomedical Engineering in Department of Biomaterials and Medical Devices Engineering of Silesian University of Technology in Zabrze. In tests of corrosion resistance the potentiostat VoltaLab PGP201 was used. Results obtained in those research complement the knowledge about the corrosion resistance of iron alloys with carbon containing Si alloying addition above 17 % [4-6]. Obtained results were supplemented with metallographic examinations using scanning electron microscopy. The analysis of chemical composition for cast irons using Leco spectrometer was done and the content of alloying element (silicon) was also determined using the gravimetric method in the laboratory of the Institute of Welding in Gliwice. The compounds of microstructure were identify by X-ray diffraction.
Preliminary tests aimed at obtaining a cellular SiC/iron alloy composite with a spatial structure of mutually intersecting skeletons, using a porous ceramic preform have been conducted. The possibility of obtaining such a composite joint using a SiC material with an oxynitride bonding and grey cast iron with flake graphite has been confirmed. Porous ceramic preforms were made by pouring the gelling ceramic suspension over a foamed polymer base which was next fired. The obtained samples of materials were subjected to macroscopic and microscopic observations as well as investigations into the chemical composition in microareas. It was found that the minimum width of a channel in the preform, which in the case of pressureless infiltration enables molten cast iron penetration, ranges from 0.10 to 0.17 mm. It was also found that the ceramic material applied was characterized by good metal wettability. The ceramics/metal contact area always has a transition zone (when the channel width is big enough), where mixing of the components of both composite elements takes place.
The article presents crystallization process of silicon molybdenum ductile cast iron (SiMo). The alloy with 5% silicon content and with variable amounts of Mo in a range of 0-1% was chosen for the research. The carbon content in the analysed alloys did not exceed 3,1%. The studies of crystallization process were based on thermal – derivative analysis (TDA). Chemical composition of all examined samples was analysed with the use of LECO spectrometer. Additionally, the carbon and the sulphur content was determined basing on carbon and sulphur LECO analyser. For metallographic examination, the scanning electron microscopy (SEM) with EDS analyser was used. Disclosed phases have been also tested with the use of X-ray diffraction. The results allowed the description of crystallization processes of silicon molybdenum ductile cast iron using thermal – derivative analysis (TDA). Conducted studies did not allow for the clear identification of all complex phases containing molybdenum, occurring at the grain boundaries. Therefore, the further stages of the research could include the use of a transmission electron microscope to specify the description of complex compounds present in the alloy.
The formation of oxide film on the surface of aluminium melts, i.e. bifilms, are known to be detrimental when they are incorporated into the cast part. These defects causes premature fractures under stress, or aid porosity formation. In this work, Al-12 Si alloy was used to cast a step mould under two conditions: as-received and degassed. In addition, 10 ppi filters were used in the mould in order to prevent bifilm intrusion into the cast part. Reduced pressure test samples were collected for bifilm index measurements. Samples were machined into standard bars for tensile testing. It was found that there was a good agreement with the bifilm index and mechanical properties.
This paper deals with numerical and analytical modelling of a diamond or silicon particle embedded in a metallic matrix. The numerical model of an elastic particle in a metallic matrix was created using the Abaqus software. Truncated octahedron-shaped and spherical-shaped diamond particles were considered. The numerical analysis involved determining the effect of temperature on the elastic and plastic parameters of the matrix material. The analytical model was developed for a spherical particle in a metallic matrix. The comparison of the numerical results with the analytical data indicates that the mechanical parameters responsible for the retention of diamond particles in a metal matrix are: the elastic energy of the particle, the elastic energy of the matrix and the radius of the plastic zone around the particle. An Al-based alloy containing 5% of Si and 2% of Cu was selected to study the mechanical behaviour of silicon precipitates embedded in the aluminium matrix. The model proposed to describe an elastic particle in a metallic matrix can be used to analyze other materials with inclusions or precipitates.
We studied lateral silicon p-i-n junctions, doped with phosphorus and boron, regarding charge sensing feasibility. In order to examine the detection capabilities and underlying mechanism, we used in a complementary way two measurement techniques. First, we employed a semiconductor parameter analyzer to measure I−V characteristics at a low temperature, for reverse and forward bias conditions. In both regimes, we systematically detected Random Telegraph Signal. Secondly, using a Low Temperature Kelvin Probe Force Microscope, we measured surface electronic potentials. Both p-i-n junction interfaces, p-i and i-n, were observed as regions of a dynamic behaviour, with characteristic time-dependent electronic potential fluctuations. Those fluctuations are due to single charge capture/emission events. We found analytically that the obtained data could be explained by a model of two-dimensional p-n junction and phosphorus-boron interaction at the edge of depletion region. The results of complementary measurements and analysis presented in this research, supported also by the previous reports, provide fundamental insight into the charge sensing mechanism utilizing emergence of individual dopants.
Accurate flatness measurement of silicon wafers is affected greatly by the gravity-induced deflection (GID) of the wafers, especially for large and thin wafers. The three-point-support method is a preferred method for the measurement, in which the GID uniquely determined by the positions of the supports could be calculated and subtracted. The accurate calculation of GID is affected by the initial stress of the wafer and the positioning errors of the supports. In this paper, a finite element model (FEM) including the effect of initial stress was developed to calculate GID. The influence of the initial stress of the wafer on GID calculation was investigated and verified by experiment. A systematic study of the effects of positioning errors of the support ball and the wafer on GID calculation was conducted. The results showed that the effect of the initial stress could not be neglected for ground wafers. The wafer positioning error and the circumferential error of the support were the most influential factors while the effect of the vertical positioning error was negligible in GID calculation.
A simple analog circuit is presented which can play a neuron role in static-model-based neural networks implemented in the form of an integrated circuit. Operating in a transresistance mode it is suited to cooperate with transconductance synapses. As a result, its input signal is a current which is a sum of currents coming from the synapses. Summation of the currents is realized in a node at the neuron input. The circuit has two outputs and provides a step function signal at one output and a linear function one at the other. Activation threshold of the step output can be conveniently controlled by means of a voltage. Having two outputs, the neuron is attractive to be used in networks taking advantage of fuzzy logic. It is built of only five MOS transistors, can operate with very low supply voltages, consumes a very low power when processing the input signals, and no power in the absence of input signals. Simulation as well as experimental results are shown to be in a good agreement with theoretical predictions. The presented results concern a 0.35 1m CMOS process and a prototype fabricated in the framework of Europractice.
Spatial light modulators (SLM) are devices used to modulate amplitude, phase or polarization of a light wave in space and time. Current SLMs are based either on MEMS (micro-electro-mechanical system) or LCD (liquid crystal display) technology. Here we report on the parameters, trends in development and applications of phase SLMs based on liquid crystal on silicon (LCoS) technology. LCoS technology was developed for front and rear projection systems competing with AMLCD (active matrix LCD) and DMD (Digital Mirror Device) SLM. The reflective arrangement due to silicon backplane allows to put a high number of pixels in a small panel, keeping the fill-factor ratio high even for micron-sized pixels. For coherent photonics applications the most important type of LCoS SLM is a phase modulator. In the paper at first we describe the typical parameters of this device and the methods for its calibration. Later we present a review of applications of phase LCoS SLMs in imaging, metrology and beam manipulation, developed by the authors as well as known from the literature. These include active and adaptive interferometers, a smart holographic camera and holographic display, microscopy modified in illuminating and imaging paths and active sensors.
Specimens of Si single crystals with different crystal orientation  and  were studied by Electro-Ultrasonic Spectroscopy (EUS) and Resonant Ultrasonic Spectroscopy (RUS). A silicon single crystal is an anisotropic crystal, so its properties are different in different directions in the material relative to the crystal orientation. EUS is based on interaction of two signals: an electric AC signal and an ultrasonic signal, which are working on different frequencies. The ultrasonic wave affects the charge carriers' transport in the structures and the intermodulation electrical signal which is created due to the interaction between the ultrasonic wave and charge carriers, is proportional to the density of structural defects. RUS enables to measure natural frequencies of free elastic vibrations of a simply shaped specimen by scanning a selected frequency range including the appropriate resonances of the measured specimens.
Results of the ab initio molecular dynamics calculations of silicon crystals are presented by means of analysis of the velocity autocorrelation function and determination of mean phonon relaxation time. The mean phonon relaxation time is crucial for prediction of the phonon-associated coefficient of thermal conductivity of materials. A clear correlation between the velocity autocorrelation function relaxation time and the coefficient of thermal diffusivity has been found. The analysis of the results obtained has indicated a decrease of the velocity autocorrelation function relaxation time t with increase of temperature. The method proposed may be used to estimate the coefficient of ther-mal diffusivity and thermal conductivity of the materials based on silicon and of other wide-bandgap semiconductors. The correlation between kinetic energy fluctuations and relaxation time of the velocity autocorrelation function has been calculated with the relatively high coefficient of determination R2 = 0.9396. The correlation obtained and the corresponding approach substantiate the use of kinetic energy fluctuations for the calculation of values related to heat conductivity in silicon-based semiconductors (coefficients of thermal conductivity and diffusivity).