In the paper selected methods of measuring the thermal resistance of an IGBT (Insulated Gate Bipolar Transistor) are presented and the accuracy of these methods is analysed. The analysis of the measurement error is performed and operating conditions of the considered device, at which each measurement method assures the least measuring error, are pointed out. Theoretical considerations are illustrated with some results of measurements and calculations.
The paper presents an overview of a method of nanosecond-scale high voltage pulse generation using magnetic compression circuits. High voltage (up to 18 kV) short pulses (up to 1.4 μs) were used for Pulsed Corona Discharge generation. In addition, the control signal of parallel connection of IGBT and MOSFET power transistor influence on system losses is discussed. For a given system topology, an influence of core losses on overall pulse generator efficiency is analysed.