In recent years organic semiconductors have been given attention in the field of active materials for gas sensor applications. In the paper the investigations of the optoelectronic sensor structure of ammonia were presented. The sensor head consists of polyaniline and Nafion layers deposited on the face of the telecommunication optical fiber. The elaborated sensor structure in the form of Fabry-Perot interferometer is of the extremely small dimension its thickness is of the order of 1 um. Many sensor structures of diffierent combinations of the polyaniline and Nafion layers were constructed and investigated. The optimal solution seems to be the structures with small number of polianiline layers (up to three).