In the paper selected methods of measuring the thermal resistance of an IGBT (Insulated Gate Bipolar Transistor) are presented and the accuracy of these methods is analysed. The analysis of the measurement error is performed and operating conditions of the considered device, at which each measurement method assures the least measuring error, are pointed out. Theoretical considerations are illustrated with some results of measurements and calculations.
In the paper the problem of modelling thermal properties of semiconductor devices with the use of compact models is presented. This class of models is defined and their development over the past dozens of years is described. Possibilities of modelling thermal phenomena both in discrete semiconductor devices, monolithic integrated circuits, power modules and selected electronic circuits are presented. The problem of the usefulness range of compact thermal models in the analysis of electronic elements and circuits is discussed on the basis of investigations performed in Gdynia Maritime University.
The one-dimension frequency analysis based on DFT (Discrete FT) is sufficient in many cases in detecting power disturbances and evaluating power quality (PQ). To illustrate in a more comprehensive manner the character of the signal, time-frequency analyses are performed. The most common known time-frequency representations (TFR) are spectrogram (SPEC) and Gabor Transform (GT). However, the method has a relatively low time-frequency resolution. The other TFR: Discreet Dyadic Wavelet Transform (DDWT), Smoothed Pseudo Wigner-Ville Distribution (SPWVD) and new Gabor-Wigner Transform (GWT) are described in the paper. The main features of the transforms, on the basis of testing signals, are presented.
This paper describes the study of thermal properties of packages of silicon carbide Schottky diodes. In the paper the packaging process of Schottky diodes, the measuring method of thermal parameters, as well as the results of measurements are presented. The measured waveforms of transient thermal impedance of the examined diodes are compared with the waveforms of this parameter measured for commercially available Schottky diodes.